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Product Detailed Parameters
- Description：NCH+SBD 2.5V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The CPH5870-TL-E is an N-channel enhancement mode MOSFET with an integrated Schottky barrier diode (SBD) from onsemi. Designed for low-voltage drive applications, it features a 2.5V gate drive series configuration. The component utilizes the CPH surface-mount package, measuring 2.9 x 1.6 x 0.9mm. It supports high-frequency operations up to 330 MHz and handles a maximum DC collector current of 5 A. Key electrical ratings include a maximum collector-emitter voltage of 50 V, a maximum collector-base voltage of 100 V, and a maximum emitter-base voltage of 6 V. The device operates at a maximum power dissipation of 900 mW and withstands junction temperatures up to +150 °C.
Feature Summary
- Integrated N-channel MOSFET and Schottky barrier diode in a single compact package
- Optimized for low-voltage 2.5V drive series applications
- High-frequency performance capability up to 330 MHz
- Surface-mount CPH package design for efficient PCB integration
Applications
- Low-voltage switching circuits
- RF signal processing stages
- Power management modules requiring integrated freewheeling diodes
Procurement Notes
Verify the specific datasheet revision and ordering suffixes when sourcing. Confirm that the CPH package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the 900 mW power dissipation limit under operating conditions. Cross-reference manufacturer part numbers to avoid counterfeit components.
Selection Notes
Select this component for designs requiring combined MOSFET switching and diode rectification in a minimal footprint. The 2.5V drive compatibility suits logic-level control interfaces. Evaluate the 50 V voltage rating against circuit peaks. Consider the 330 MHz frequency limit for RF suitability. Compare thermal resistance values if high current loads are expected.
Part Context
This device belongs to onsemi's discrete semiconductor product line, specifically within the transistor and MOSFET categories. It is categorized as an RF bipolar/MOSFET hybrid solution. The CPH packaging family offers small outline options for dense board layouts. onsemi focuses on intelligent power and sensing technologies for automotive and industrial sectors.
Replacement Considerations
Check for direct substitutes within the CPH package family or equivalent N-channel MOSFET+SBD combinations. Verify pinout compatibility and electrical parameter margins before substitution.
