CPH6003A-TL-E

Overview

The onsemi CPH6003A-TL-E is an NPN silicon RF bipolar junction transistor designed for high-frequency applications. It utilizes a compact 6-CPH surface-mount package, measuring 2.9 x 1.6 x 0.9 mm. The device features a maximum collector-emitter voltage of 12 V and a continuous collector current of 100 mA. It operates with a transition frequency of up to 7 GHz and supports a maximum power dissipation of 800 mW. The component is rated for junction temperatures up to +150 °C and includes a minimum DC current gain (hFE) of 60 at 50 mA and 5 V.

Feature Summary

• Optimized for radio frequency amplification in wireless communication systems
• High thermal stability supporting operation up to 150 °C junction temperature
• Compact footprint suitable for space-constrained mobile and IoT designs

Applications

• RF power amplifiers in cellular infrastructure
• Low-noise amplifier stages in wireless transceivers
• Signal conditioning in IoT modules

Procurement Notes

Verify the specific suffix TL-E against the manufacturer's latest datasheet to confirm pinout orientation and tape-and-reel specifications. Ensure compatibility with standard SMT reflow profiles and check for RoHS compliance documentation prior to integration into production lines.

Selection Notes

Select this component when designing circuits requiring high-frequency performance near 7 GHz with moderate power handling. Compare hFE variations across operating points and verify thermal management requirements for the 800 mW dissipation limit within the target enclosure constraints.

Part Context

This part belongs to the CPH series of RF transistors from onsemi, which are engineered for high-efficiency signal processing. The series typically serves as a core active element in RF front-end modules, providing reliable gain and linearity for modern wireless standards.

Replacement Considerations

Publicly confirmed substitute part numbers for CPH6003A-TL-E were not identified in the provided source material. Verify electrical equivalence with other 12V NPN RF transistors if direct substitution is required.