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Product Detailed Parameters
- Description：MOSFET P-CH 12V 3.5A 6CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：70mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：405 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-CPH
- Package / Case：SOT-23-6
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Overview
The CPH6337-TL-E is a single P-Channel Power MOSFET manufactured by onsemi using trench technology. It features a Drain-to-Source Voltage (V_DSS) of -12 V and a continuous Drain Current (I_D) of -3.5 A. The device offers low on-resistance, specified as 70 mΩ at V_GS = -4.5 V, 115 mΩ at -2.5 V, and 215 mΩ at -1.8 V. Total gate charge (Q_g) is typically 5.6 nC at V_DS = -6 V, V_GS = -4.5 V, and I_D = -3.5 A. The component operates within a junction temperature range of -55°C to +150°C and is housed in a 6-pin SOT-26 package.
Feature Summary
- Utilizes trench technology to minimize gate charge and achieve low on-resistance.
- Capable of operation with a 1.8 V gate drive voltage.
- Designed for high-speed switching applications.
Applications
- Load Switch
Procurement Notes
Verify the specific ordering suffix when purchasing. The -TL-E suffix indicates a Tape & Reel packaging format containing 3,000 units per reel. The -TL-W suffix denotes a halogen-free variant within the same physical package. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation prior to integration into final assemblies.
Selection Notes
Select this component for circuits requiring a single P-Channel switch with a 12 V breakdown voltage. The device is suitable for low gate charge driving requirements due to its 5.6 nC typical total gate charge. Ensure the application logic provides sufficient negative gate-source voltage to achieve the desired on-resistance levels, particularly if operating near the 1.8 V minimum drive threshold.
Part Context
This part belongs to the CPH series of power MOSFETs from onsemi. These devices are engineered for general-purpose switching applications where low conduction loss and fast switching speeds are prioritized. The CPH6337 specifically targets load switching functions within compact surface-mount designs.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided source material.
FAQ
What is the maximum Drain-to-Source Voltage for the CPH6337?
The absolute maximum Drain-to-Source Voltage (V_DSS) is -12 V.
How does the on-resistance vary with gate drive voltage?
The static drain-to-source on-state resistance increases as the gate drive voltage decreases: 70 mΩ at -4.5 V, 115 mΩ at -2.5 V, and 215 mΩ at -1.8 V.
