CPH6341-TL-E

CPH6341-TL-E

  • Description:MOSFET P-CH 30V 5A 6CPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:a3d60cbb5618 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH 30V 5A 6CPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:59mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.6W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-CPH
  • Package / Case:SOT-23-6

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CPH6341-TL-E

Overview

The CPH6341-TL-E is a P-Channel Power MOSFET from onsemi, designed for general-purpose switching applications. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 5 A. The device utilizes a SOT-26 (SOT-363) surface-mount package. Key electrical characteristics include a maximum on-resistance of 115 mΩ at -4.5 V gate-source voltage and a typical gate charge of 10 nC. It operates within a temperature range of -55 °C to +150 °C junction temperature.

Feature Summary

  • Optimized for low-voltage drive series compatibility
  • Enhanced switching performance with controlled rise and fall times
  • Robust thermal management capabilities for high-power dissipation

Applications

  • General-purpose switching devices
  • DC/DC converter circuits
  • Motor driver applications

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Ensure the ordering part number matches the required package variant. Confirm RoHS compliance status through the manufacturer's latest documentation before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a single P-channel MOSFET with moderate current handling. Evaluate the 115 mΩ on-resistance against thermal constraints. Consider the SOT-26 footprint for space-constrained PCB layouts. Verify gate drive voltage levels align with the specified threshold requirements.

Part Context

This component belongs to the CPH6341 family of power MOSFETs manufactured by onsemi. It serves as a surface-mount alternative to larger packages, integrating silicon technology for efficient switching. The device is categorized under single-channel enhancement mode transistors within the broader transistor product line.

Replacement Considerations

Cross-reference with MCH6341-TL-H or CPH6341-TL-W for potential equivalents. Verify that substitute parts maintain identical pin configurations and electrical ratings. Confirm package compatibility and thermal performance metrics match the original design requirements.

CPH6341-TL-ECPH6341-TL-E

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