SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CPH6341-TL-E is a P-Channel Power MOSFET from onsemi, designed for general-purpose switching applications. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 5 A. The device utilizes a SOT-26 (SOT-363) surface-mount package. Key electrical characteristics include a maximum on-resistance of 115 mΩ at -4.5 V gate-source voltage and a typical gate charge of 10 nC. It operates within a temperature range of -55 °C to +150 °C junction temperature.
Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Ensure the ordering part number matches the required package variant. Confirm RoHS compliance status through the manufacturer's latest documentation before finalizing procurement specifications.
Select this component for designs requiring a single P-channel MOSFET with moderate current handling. Evaluate the 115 mΩ on-resistance against thermal constraints. Consider the SOT-26 footprint for space-constrained PCB layouts. Verify gate drive voltage levels align with the specified threshold requirements.
This component belongs to the CPH6341 family of power MOSFETs manufactured by onsemi. It serves as a surface-mount alternative to larger packages, integrating silicon technology for efficient switching. The device is categorized under single-channel enhancement mode transistors within the broader transistor product line.
Cross-reference with MCH6341-TL-H or CPH6341-TL-W for potential equivalents. Verify that substitute parts maintain identical pin configurations and electrical ratings. Confirm package compatibility and thermal performance metrics match the original design requirements.