CPH6354-TL-W

$0.45

Description：MOSFET P-CH 60V 4A 6CPH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b59511dff6e9 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 4A 6CPH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-CPH
Package / Case：SOT-23-6

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CPH6354-TL-W

Overview

The CPH6354-TL-W is a single P-Channel enhancement mode MOSFET manufactured by onsemi. It features a 60 V drain-source breakdown voltage and supports a continuous drain current of 4 A. The device exhibits a maximum on-resistance of 145 mOhms at specified gate conditions. Gate-source voltage limits are defined as -20 V to +20 V, with a threshold voltage of 1.2 V. Total gate charge is 14 nC. Power dissipation reaches 1.6 W. Operating temperatures range from -55 °C to +150 °C. Rise and fall times are 12 ns and 40 ns respectively. Minimum forward transconductance is 4.8 S.

Feature Summary

Utilizes silicon technology for robust performance in surface-mount applications.
Designed for low-side switching configurations within power management circuits.
Optimized for fast switching speeds with controlled rise and fall characteristics.

Applications

Power management integrated circuit output stages
Load switching in portable electronic devices
DC-DC converter synchronous rectification

Procurement Notes

Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm package integrity upon receipt, as the SOT-26-6 housing is sensitive to mechanical stress. Cross-reference datasheet revisions to ensure parameter consistency with design requirements. Validate RoHS and REACH compliance documentation matches current manufacturing standards. Inspect leads for oxidation before soldering operations.

Selection Notes

Evaluate thermal resistance capabilities against expected power dissipation levels in the target application. Compare on-resistance values with alternative components to optimize efficiency. Ensure gate drive voltages remain within the specified -20 V to +20 V range to prevent dielectric breakdown. Consider the 1.6 W power rating when designing heat dissipation strategies for enclosed environments.

Part Context

This component belongs to the CPH6354 series of P-Channel MOSFETs from onsemi. It shares the SOT-26-6 package form factor with other devices in the lineup but differs in voltage and current ratings. The series targets compact power switching solutions requiring high reliability and low profile dimensions for modern electronics assembly.