CPH6442-TL-E

CPH6442-TL-E

  • Description:MOSFET N-CH 60V 6A 6CPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:635211a062d4 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 6A 6CPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:43mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1040 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):1.6W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-CPH
  • Package / Case:SOT-23-6

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CPH6442-TL-E

Overview

The onsemi CPH6442-TL-E is a single N-channel enhancement mode MOSFET designed for surface-mount applications. It features a 60 V drain-source breakdown voltage and supports a continuous drain current of 6 A. The device utilizes a compact CPH package with six pins, measuring 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height. Key electrical characteristics include a maximum on-resistance of 33 mΩ at low gate drive voltages, a threshold voltage of 1.2 V, and a total gate charge of 20 nC. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 1.6 W.

Feature Summary

  • Low on-resistance optimized for efficient power switching in compact form factors
  • Enhanced gate drive capability allowing operation with low voltage logic signals
  • High thermal stability supporting reliable performance across extended temperature ranges

Applications

  • DC-DC converter output stages
  • Load switching circuits
  • Power management modules

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure ESD handling protocols are followed during assembly due to the sensitivity of the gate oxide layer in this component type.

Selection Notes

Select this component when a low-profile N-channel MOSFET is required for high-current switching applications. The 6 A current rating and 33 mΩ resistance offer a balance between conduction losses and package size. Consider the 60 V voltage rating for systems operating below this threshold to ensure adequate safety margins.

Part Context

This part belongs to the CPH series of surface-mount transistors from onsemi. The CPH package provides a small footprint suitable for dense PCB layouts while maintaining thermal performance. This series includes various transistor types such as BJTs and JFETs, but this specific model is an N-channel MOSFET.

Replacement Considerations

The CPH6442-TL-W is a variant within the same product family. Verify if the suffix change affects packaging or specific electrical parameters before substitution.

CPH6442-TL-ECPH6442-TL-E

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