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Product Detailed Parameters
- Description：MOSFET N-CH 35V 6A 6CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：35 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：37mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：470 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-CPH
- Package / Case：SOT-23-6
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Overview
The CPH6443-TL-H is a single N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 3.5 A. The device exhibits a typical on-resistance (Rds(on)) of 28 mΩ at Vgs = 4.5 V, supporting low-loss switching. It operates with a gate threshold voltage (Vgs(th)) of 1.2 V to 1.3 V and has a total gate charge (Qg) of approximately 2.8 nC at 4.5 V. The component is housed in a compact SMD package with three pins.
Feature Summary
- Designed for general-purpose switching applications with optimized low on-resistance characteristics.
- Capable of operation with low gate drive voltages, specifically compatible with 4V drive systems.
- Constructed using silicon technology for reliable performance in surface-mount configurations.
Applications
- General-purpose switching circuits
- Low-voltage power management systems
- Battery-powered portable devices
Procurement Notes
Verify the specific suffix TL-H against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS compliance status. Confirm that the 20 V rating aligns with your circuit requirements. Check for obsolescence notices as this component may have been superseded by newer revisions or alternative packages within the same product family.
Selection Notes
Select this component when a low-cost, small-footprint N-channel MOSFET is required for switching loads up to 3.5 A. Ensure the application voltage does not exceed 20 V. Consider the 28 mΩ on-resistance for thermal management in high-current scenarios. Verify that the 4V drive capability matches the control logic levels available in the design.
Part Context
This part belongs to onsemi's standard discrete semiconductor portfolio, specifically within the MOSFET category. It represents a legacy product line originally developed under Sanyo Semicon Device before acquisition. The CPH series is designed for cost-sensitive consumer and industrial electronics requiring efficient power switching in minimal space.
Replacement Considerations
Direct substitutes include CPH6443-TL-W and CPH6443 from onsemi. Cross-reference with MCH3421 or MCH3459 from Sanyo/ON Semiconductor for similar N-channel specifications. Always verify electrical parameters and package dimensions before substitution.
