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The onsemi CPH6444-TL-W is a single N-channel enhancement mode Power MOSFET designed for surface-mount applications. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 4.5A. The device exhibits a low on-resistance of 78mΩ, with a maximum specified at 60mΩ in some documentation contexts, ensuring efficient power handling. It operates within a temperature range of -55°C to +150°C and dissipates up to 1.6W of power. Packaged in a compact SOT-26-6 format, it utilizes silicon technology and includes standard gate-source voltage limits of ±20V.
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm RoHS and REACH compliance details prior to integration. Ensure storage conditions maintain moisture sensitivity levels appropriate for the SOT-26-6 package. Cross-reference datasheet revisions to guarantee parameter consistency with existing design specifications.
Select this component for designs requiring a robust single N-channel switch with moderate current capabilities. The 60V rating suits low-voltage DC systems. Evaluate thermal dissipation requirements against the 1.6W limit. Consider the SOT-26-6 footprint compatibility during PCB layout. Compare gate charge parameters against driver capabilities for optimal switching performance.
This part belongs to the CPH series of power MOSFETs from onsemi, focusing on small-signal and power switching applications. The series emphasizes low on-resistance and high reliability for consumer and industrial electronics. The CPH6444 variant specifically targets single-channel N-channel needs within the broader portfolio of discrete semiconductor devices.
Publicly confirmed substitute part numbers are not available in the provided source material.