ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 60V 3.5A CPH6
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：117mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：6.8 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：310 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-CPH
- Package / Case：SOT-23-6
Download product information
Overview
The onsemi CPH6445-TL-E is a single N-channel enhancement mode Power MOSFET designed for surface-mount applications. It features a 60 V drain-to-source voltage rating and a continuous drain current of 3.5 A at 25°C. The device utilizes the compact CPH package, measuring 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height with six pins. Key electrical parameters include a maximum drain-source on-resistance of 65 mΩ and a typical gate charge of 20 nC at 10 V. It operates with a maximum junction temperature of +150 °C and supports a gate-source voltage range of -20 V to +20 V.
Feature Summary
- N-channel enhancement mode configuration for efficient switching control
- Low on-resistance design to minimize conduction losses
- Compact CPH surface-mount package for space-constrained layouts
- High thermal stability supporting elevated operating temperatures
Applications
- DC-DC converter circuits
- Load switching applications
- Power management modules
Procurement Notes
Verify the specific suffix (TL-E) against the manufacturer's latest documentation to ensure correct tape-and-reel packaging and quality grade. Confirm that the CPH package dimensions match your PCB footprint requirements. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage, high-current N-channel switch is required in a minimal footprint. Compare the 65 mΩ Rds(on) against system loss budgets. Ensure the driving circuit can provide sufficient gate voltage within the ±20 V limit. Evaluate the thermal performance relative to the expected ambient conditions and heat dissipation capabilities of the target application.
Part Context
This part belongs to onsemi’s portfolio of intelligent power and sensing technologies, specifically within the discrete semiconductor category. It complements their broader range of MOSFETs designed for mission-critical power systems. The product aligns with industry trends toward higher efficiency and greater power density in modern electronic designs.
Replacement Considerations
The CPH6445-TL-W is a documented variant from the same manufacturer family. Verify pinout compatibility and electrical specifications before substitution. Ensure the alternative package variant meets all mechanical and thermal requirements of the existing design.
