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Product Detailed Parameters
- Description：P-CHANNEL SILICON MOSFET ULTRAHI
- Series：*
- Mfr：Sanyo
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The CPH6603-TL-E is a semiconductor switching device manufactured by Sanyo Electric Co., Ltd. It is characterized by low ON-resistance and ultrahigh-speed switching capabilities, designed for efficient power management applications. The component supports 4V drive logic levels, facilitating integration with modern low-voltage control circuits. As part of the CPH series, it represents a specialized solution for high-frequency operation where rapid transition times and minimal conduction losses are critical requirements.
Feature Summary
- Ultrahigh-speed switching performance
- Low ON-resistance design
- Compatible with 4V drive logic
Applications
- High-frequency power switching circuits
- DC-DC converter modules
- Motor driver interfaces
Procurement Notes
Verify the manufacturer designation carefully, as the CPH series was originally developed by Sanyo Semiconductor, which has undergone corporate restructuring and brand transitions. Ensure the datasheet explicitly references Sanyo Electric or its successor entities to confirm authenticity. Cross-reference the full part number including the suffix to match specific tape-and-reel packaging or testing grades provided in official documentation.
Selection Notes
Select this component when circuit design requires fast switching speeds combined with low on-state resistance to minimize thermal dissipation. The 4V drive compatibility makes it suitable for systems utilizing standard logic-level outputs without requiring additional gate drive amplification. Evaluate thermal management needs based on the expected load current and switching frequency to ensure reliable operation within specified junction temperature limits.
Part Context
This device belongs to the CPH family of bipolar transistors and FBET (Fast Bipolar Emitter Transistor) devices produced by Sanyo. These components were engineered to address the growing demand for high-efficiency power electronics in consumer and industrial equipment. The series utilizes advanced processing techniques to achieve superior speed and current handling compared to standard discrete transistors of the era.
Replacement Considerations
Publicly confirmed substitute part numbers for CPH6603-TL-E are not available in the provided source material. Engineers should consult original manufacturer obsolescence notices or technical support for direct pin-compatible alternatives if sourcing from secondary markets.
