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Product Detailed Parameters
- Description：IGBT MODULE 600V 11A 36W IMS-2
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Bulk
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 11A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：19-SIP (13 Leads), IMS-2
- Supplier Device Package：IMS-2
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：11:00 AM
- Power - Max：36 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：740 pF @ 30 V
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Overview
The CPV363M4K is a silicon Insulated Gate Bipolar Transistor (IGBT) module manufactured by Vishay Semiconductors. It features a Hex configuration housed in an IMS-2-13 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a gate-emitter voltage range of -20 V to +20 V. It provides a continuous collector current of 11 A, with specific operational ratings indicating a 6.0 A capacity in certain contexts. The component operates within a temperature range of -40°C to +150°C.
Feature Summary
- Hex configuration for integrated switching functionality
- IMS-2-13 package design facilitating thermal management
- Through-hole installation compatibility
Applications
- Power conversion circuits requiring insulated gate control
- Industrial motor drive systems
- High-voltage switching applications
Procurement Notes
Verify the exact suffix against official Vishay documentation to confirm RoHS compliance and lead-free status. Confirm the manufacturer source, as part numbers may appear under different corporate entities like International Rectifier or Infineon. Ensure the IMS-2-13 package dimensions match the target PCB layout requirements before ordering.
Selection Notes
Select this component when a 600 V IGBT with Hex topology is required. Verify that the 11 A continuous current rating meets the load demands. Check that the operating temperature range up to 150°C aligns with the system's thermal environment. Ensure the through-hole mounting style is compatible with the assembly process.
Part Context
This component belongs to the IGBT Transistors subcategory under Vishay's semiconductor portfolio. It is distinct from Vishay's diode and TVS product lines. The part number may be associated with legacy branding from International Rectifier or Infineon, reflecting corporate acquisitions. It serves as a discrete power switching element rather than a protection device.
Replacement Considerations
Public records indicate potential cross-references with International Rectifier and Infineon listings for the base CPV363M4K designation. Verify electrical equivalence and pinout compatibility before substituting. Official Vishay datasheets should be consulted to confirm if alternative suffixes denote identical performance characteristics.
