CPV363M4U

Overview

The CPV363M4U is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Vishay General Semiconductor - Diodes Division. It features a Hex configuration and utilizes IMS-2-13 packaging for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 11 A. Operating temperatures range from -40°C to +150°C, with gate-emitter voltage limits set at -20 V and +20 V.

Feature Summary

• Hex configuration for integrated circuit protection
• High thermal performance via IMS-2-13 package
• Through-hole mounting capability

Applications

• Motor control systems
• Power supply units
• Industrial automation equipment

Procurement Notes

Verify the exact suffix against official Vishay documentation, as 'U' variants may denote specific tape-and-reel or bulk packaging distinctions compared to standard 'PBF' designations. Confirm RoHS compliance status directly with the manufacturer's latest datasheet revision to ensure alignment with current regulatory requirements before finalizing procurement orders.

Selection Notes

Select this component when a hex-configured IGBT is required for compact power switching applications. Ensure the PCB layout accommodates the IMS-2-13 footprint and that the thermal management system can handle the dissipation characteristics associated with the 11 A continuous current rating within the specified temperature range.

Part Context

This part belongs to the CPV series of hex-configured IGBTs from Vishay. These devices integrate multiple IGBTs and diodes into a single package to reduce board space and simplify driver circuitry. The series is designed for high-efficiency power conversion where compact form factors are critical.

Replacement Considerations

Publicly confirmed substitute part numbers for the CPV363M4U variant were not identified in available documentation. Verify pinout compatibility and electrical parameters if considering alternative hex IGBT packages from other manufacturers.