CPV364M4U

Overview

The VS-CPV364M4UPBF is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Vishay Semiconductors. It features a hex configuration and utilizes an IMS-2-13 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a gate-emitter voltage range of -20 V to +20 V. It provides a continuous collector current of 20 A at 25°C. The component operates within a temperature range from -40°C to +150°C.

Feature Summary

• Hex configuration for integrated circuit protection
• IMS-2-13 package optimized for thermal management
• Through-hole installation style

Applications

• Motor drive circuits
• Power supply systems
• Industrial control applications

Procurement Notes

This component is listed as obsolete or end-of-life. Verification of availability requires checking specific distributor status, as Mouser indicates non-sale in certain regions. Engineering samples may be unavailable. Designers should prioritize replacement part selection immediately due to discontinuation status.

Selection Notes

Select this IGBT for designs requiring a 600V rating with a hex configuration. Ensure the PCB layout accommodates the IMS-2-13 through-hole footprint. Verify that the thermal dissipation requirements align with the package capabilities. Confirm that the 20A continuous current rating meets the load demands under expected operating temperatures.

Part Context

The CPV364M4U belongs to Vishay's IGBT transistor family. It is categorized under power discrete semiconductors. The suffix 'PBF' typically denotes lead-free compliance. This specific part number represents a discontinued variant within the broader hex IGBT product line.

Replacement Considerations

Direct substitutes include other hex IGBTs with matching 600V ratings and similar pinouts. Check Vishay datasheets for updated hex IGBT models. Verify electrical parameters such as Vceo and Ic against the original specifications before substitution.