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Product Detailed Parameters
- Description：PROTOTYPE
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：14.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：9.3mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：997 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：2.7W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD13202Q2T is a single N-channel NexFET power MOSFET with a 12 V drain-to-source voltage rating. It features an ultra-low on-resistance of 7.5 mΩ at VGS = 4.5 V and 9.1 mΩ at VGS = 2.5 V, supporting a continuous drain current of 14.4 A. The device incorporates a compact WSON-6 (SON 2x2) package for efficient thermal dissipation. Key dynamic characteristics include a total gate charge of 5.1 nC and a maximum avalanche energy rating of 20 mJ.
Feature Summary
- Ultra-low gate charge and reverse transfer capacitance to minimize switching losses
- Avalanche rated capability for robustness against inductive load transients
- Low thermal resistance junction-to-case for effective heat dissipation
- Lead-free terminal plating compliant with RoHS and halogen-free standards
Applications
- Load switch applications
- Point-of-load synchronous buck converters
- Control FET applications
- Storage, tablets, and handheld devices
Procurement Notes
Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component status remains active production. Ensure the package marking aligns with the intended assembly process. Validate that the lead finish meets the solderability requirements of the manufacturing line. Cross-reference the moisture sensitivity level with storage conditions.
Selection Notes
Select this component when low conduction loss is critical at 4.5 V or 2.5 V drive voltages. The small footprint suits space-constrained portable electronics. Evaluate the thermal performance based on the specific PCB copper area available. Consider the avalanche rating if the circuit encounters significant inductive loads.
Part Context
This part belongs to the NexFET family from Texas Instruments, designed for high-efficiency power management. The Q2 designation indicates the specific plastic SON package variant. It serves as a direct replacement for older generation MOSFETs requiring similar voltage ratings but offering superior RDS(on) and switching speed.
Replacement Considerations
Check pinout compatibility before substituting. Verify that the replacement device supports the same 12 V rating and current handling capabilities. Ensure the thermal resistance characteristics match the existing board design constraints.
