CSD13302WT

$1.28

Description：MOSFET N-CH 12V 1.6A 4DSBGA
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT),Bulk

SKU:e52ccb7d1675 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 12V 1.6A 4DSBGA
Series：NexFET™
Mfr：Texas Instruments
Package：Tape & Reel (TR),Cut Tape (CT),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：17.1mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：862 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：4-DSBGA (1x1)
Package / Case：4-UFBGA, DSBGA

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CSD13302WT

Overview

The CSD13302WT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and is housed in a DSBGA-4 surface-mount package. The device features a drain-source breakdown voltage of 12 V and supports a continuous drain current of 1.6 A. Its on-resistance is specified at 17.1 mOhms, with a gate threshold voltage of 700 mV. Key switching parameters include a total gate charge of 7.8 nC and rise/fall times of 7 ns. The component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1.8 W.

Feature Summary

NexFET technology designed for ultra-low resistance performance
Enhancement mode single channel configuration
Integrated body diode structure

Applications

DC-DC converter circuits
Power management systems
Load switching applications

Procurement Notes

Verify the specific ordering suffix 'WT' against official Texas Instruments documentation to confirm reel packaging specifications. Ensure compatibility with standard SMD/SMT assembly processes. Confirm RoHS compliance status through the manufacturer's datasheet before procurement. Validate that the DSBGA-4 footprint matches the target PCB design requirements.

Selection Notes

Select this component for low-voltage applications requiring efficient switching with minimal conduction losses. The 12 V rating suits battery-powered or low-voltage DC systems. Consider the small DSBGA-4 package for space-constrained designs. Evaluate thermal management needs based on the 1.8 W power dissipation limit and operating environment.

Part Context

This part belongs to the CSD13302W series of NexFET power MOSFETs from Texas Instruments. These devices are engineered for high efficiency in power conversion tasks. The series focuses on reducing on-resistance while maintaining robust switching characteristics suitable for modern electronic equipment.