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Product Detailed Parameters
- Description：MOSFET N-CH 12V 3.5A 6DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：10.2mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.2 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1370 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-DSBGA (1x1.5)
- Package / Case：6-UFBGA, DSBGA
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Overview
The CSD13306W is a 12 V N-Channel NexFET™ Power MOSFET manufactured by Texas Instruments. It features a 6-DSBGA package with a grid array configuration. Key electrical parameters include a maximum drain current of 3.5 A and an ultra-low on-resistance of 0.0155 Ω. The device incorporates a built-in diode and has a maximum feedback capacitance of 294 pF. It operates within a temperature range compliant with standard industrial specifications.
Feature Summary
- Ultra-low resistance design for efficient power switching
- Integrated body diode for simplified circuit topology
- NexFET technology optimized for low gate charge
Applications
- Low voltage DC-DC converter circuits
- Power management modules requiring high efficiency
- Battery protection and load switch applications
Procurement Notes
Verify the specific suffix 'WT' against the official datasheet to confirm package and tape-and-reel specifications. Ensure compliance with RoHS and REACH directives as stated in the component documentation. Confirm moisture sensitivity level requirements during storage and handling procedures prior to assembly.
Selection Notes
Select this component for applications demanding minimal conduction losses at low voltage levels. The 12 V rating suits systems operating near this threshold. Evaluate thermal performance based on the 3.5 A continuous current capability and the specific PCB layout constraints associated with the 6-DSBGA footprint.
Part Context
This part belongs to the CSD13306W series of N-Channel MOSFETs from Texas Instruments. The series utilizes NexFET technology to deliver enhanced performance in small form factors. It is designed for modern power management solutions where space and efficiency are critical constraints.
Replacement Considerations
Consult the manufacturer's cross-reference guide for verified substitutes. Ensure any replacement matches the 12 V rating, 6-DSBGA package, and electrical characteristics such as Rds(on) and Id.
