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Product Detailed Parameters
- Description：MOSFET N-CH 12V 3.6A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：76mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2 nC @ 4.5 V
- Vgs (Max)：8V
- Input Capacitance (Ciss) (Max) @ Vds：156 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD13380F3T is a single N-channel enhancement mode MOSFET from the Texas Instruments FemtoFET series. It features a 12 V drain-source voltage (Vdss) and supports a continuous drain current of 3.6 A at ambient temperature. The device utilizes a 3-PICOSTAR surface-mount package with dimensions of 0.69 x 0.60 mm. Key electrical parameters include a maximum gate-source voltage of 8 V, a threshold voltage of 1.3 V at 250 µA, and a gate charge of 1.2 nC at 4.5 V. The on-resistance is specified as 76 mΩ at 4.5 V with 400 mA drain current. Input capacitance is 156 pF at 6 V. Power dissipation is rated at 500 mW, and the operating junction temperature range spans from -55°C to +150°C.
Feature Summary
- Ultra-small 3-PICOSTAR footprint designed for high-density surface-mount applications
- Low gate charge characteristics enabling efficient switching performance
- Enhanced thermal stability with a wide operating junction temperature range
Applications
- Portable consumer electronics requiring minimal board space
- Battery-powered devices utilizing low-voltage power management
- DC-DC converter output stages in compact form factors
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure that the requested variant matches the exact electrical tolerances and marking codes defined in the latest product documentation. Cross-reference the part number with authorized distribution channels to guarantee authenticity and traceability.
Selection Notes
Select this component when design constraints demand the smallest possible N-channel MOSFET footprint within the 12 V voltage class. The FemtoFET technology offers optimized trade-offs between on-resistance and gate charge for low-power switching applications. Consider the 3.6 A current rating and 500 mW power dissipation limits relative to the thermal management capabilities of the target PCB layout.
Part Context
This device belongs to the FemtoFET family, which focuses on miniaturization for portable electronics. It complements other variants in the CSD1338x series by providing a specific balance of current handling and voltage rating in an ultra-compact package. The series is engineered to meet the stringent size requirements of modern mobile and wearable hardware designs.
Replacement Considerations
Direct substitutes within the same FemtoFET family include CSD13381F4 and CSD13383F4. Verify pinout compatibility and ensure that alternative part numbers meet or exceed the required 12 V breakdown voltage and current carrying capacity before implementation.
