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Product Detailed Parameters
- Description：MOSFET N-CH 12V 2.1A 3PICOSTAR
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：180mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 4.5 V
- Vgs (Max)：8V
- Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD13381F4 is a 12 V N-Channel FemtoFET MOSFET manufactured by Texas Instruments. It features a single enhancement-mode channel with a maximum continuous drain current of 2.1 A and a drain-source breakdown voltage of 12 V. The device exhibits a typical on-resistance of 400 mΩ at room temperature. Key electrical parameters include a gate threshold voltage ranging from 0.65 V to 1.1 V, a gate charge of 1.06 nC at 4.5 V, and a maximum power dissipation of 500 mW. It operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Utilizes the FemtoFET technology platform for optimized performance in small form factors.
- Designed as a single-channel enhancement-mode N-Channel MOSFET for efficient switching applications.
- Constructed using silicon (Si) technology for reliable operation across industrial temperature ranges.
Applications
- Battery-powered portable devices requiring low-voltage switching
- Power management circuits in consumer electronics
- General-purpose low-side switching in compact systems
Procurement Notes
Verify the specific ordering suffix when purchasing. The base part number CSD13381F4 may be available in tape-and-reel formats such as CSD13381F4T. Confirm package availability and reel quantities directly with authorized distributors or Texas Instruments to ensure compatibility with automated assembly processes. Check RoHS compliance status for regulatory requirements.
Selection Notes
Select this component for applications requiring a 12 V N-Channel MOSFET in a PICOSTAR-3 package. Ensure the design accounts for the 400 mΩ on-resistance and 2.1 A current limit. Verify that the gate drive voltage aligns with the specified threshold and charge characteristics. Consider thermal constraints given the 500 mW power dissipation rating in the small outline package.
Part Context
This device belongs to the Texas Instruments FemtoFET series, which focuses on high-performance power MOSFETs in ultra-small packages. The PICOSTAR-3 package provides a compact footprint suitable for space-constrained designs. The series includes various voltage and current ratings to support diverse low-power switching needs in modern electronic equipment.
Replacement Considerations
Publicly confirmed substitute part numbers are not provided in the source material. Engineers should consult Texas Instruments documentation or authorized distributor cross-reference tools to identify compatible alternatives based on specific electrical and mechanical requirements.
