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The CSD13385F5T is a single N-channel silicon power MOSFET from the FemtoFET series, manufactured by Texas Instruments. It utilizes NexFET technology and is housed in a 3-pin PICOSTAR surface-mount package with dimensions of 1.49x0.73 mm. The device features a drain-source breakdown voltage (Vds) of 12 V and a continuous drain current (Id) of 4.3 A at ambient temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 19 mΩ at Vgs = 4.5 V, a gate charge (Qg) of 5 nC, and a threshold voltage (Vgs(th)) ranging from 500 mV to 1.2 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 500 mW.
Verify the specific suffix 'T' indicates tape-and-reel packaging when sourcing components. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor datasheets prior to integration. Ensure the ordering part number matches the exact pinout and thermal specifications required for the target application design.
Select this component for applications requiring a 12 V rated N-channel switch with minimal footprint constraints. The low Rds(on) value supports efficient power handling in compact designs. Consider the 500 mW power dissipation limit and thermal resistance characteristics when designing heat dissipation strategies for the PICOSTAR package.
This component belongs to the CSD13385 family of NexFET power MOSFETs. It shares the same core semiconductor structure and electrical ratings as the CSD13385F5, differing primarily in the standard reel packaging configuration indicated by the 'T' suffix. Both variants are part of Texas Instruments' portfolio aimed at optimizing space and efficiency in modern power electronics.
The CSD13385F5 serves as a direct functional equivalent to the CSD13385F5 regarding electrical performance and pinout. Designers should verify that any alternative replacement maintains identical package dimensions and thermal characteristics to ensure mechanical compatibility without board redesign.