CSD13385F5T

CSD13385F5T

$1.28
  • Description:MOSFET N-CH 12V 4.3A 3PICOSTAR
  • Series:FemtoFET™
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:0eacc79f0621 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 12V 4.3A 3PICOSTAR
  • Series:FemtoFET™
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):12 V
  • Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:19mOhm @ 900mA, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:5 nC @ 4.5 V
  • Vgs (Max):8V
  • Input Capacitance (Ciss) (Max) @ Vds:674 pF @ 6 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-PICOSTAR
  • Package / Case:3-SMD, No Lead

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CSD13385F5T

Overview

The CSD13385F5T is a single N-channel silicon power MOSFET from the FemtoFET series, manufactured by Texas Instruments. It utilizes NexFET technology and is housed in a 3-pin PICOSTAR surface-mount package with dimensions of 1.49x0.73 mm. The device features a drain-source breakdown voltage (Vds) of 12 V and a continuous drain current (Id) of 4.3 A at ambient temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 19 mΩ at Vgs = 4.5 V, a gate charge (Qg) of 5 nC, and a threshold voltage (Vgs(th)) ranging from 500 mV to 1.2 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 500 mW.

Feature Summary

  • Utilizes Texas Instruments' NexFET silicon technology for enhanced switching performance.
  • Features an ultra-compact PICOSTAR-3 surface-mount package designed for high-density PCB layouts.
  • Provides low gate charge characteristics to facilitate efficient driver interface and reduced switching losses.

Applications

  • Low-voltage synchronous buck converter circuits
  • DC-DC step-down power supply modules
  • Portable electronic device power management systems

Procurement Notes

Verify the specific suffix 'T' indicates tape-and-reel packaging when sourcing components. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor datasheets prior to integration. Ensure the ordering part number matches the exact pinout and thermal specifications required for the target application design.

Selection Notes

Select this component for applications requiring a 12 V rated N-channel switch with minimal footprint constraints. The low Rds(on) value supports efficient power handling in compact designs. Consider the 500 mW power dissipation limit and thermal resistance characteristics when designing heat dissipation strategies for the PICOSTAR package.

Part Context

This component belongs to the CSD13385 family of NexFET power MOSFETs. It shares the same core semiconductor structure and electrical ratings as the CSD13385F5, differing primarily in the standard reel packaging configuration indicated by the 'T' suffix. Both variants are part of Texas Instruments' portfolio aimed at optimizing space and efficiency in modern power electronics.

Replacement Considerations

The CSD13385F5 serves as a direct functional equivalent to the CSD13385F5 regarding electrical performance and pinout. Designers should verify that any alternative replacement maintains identical package dimensions and thermal characteristics to ensure mechanical compatibility without board redesign.

CSD13385F5TCSD13385F5T
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