CSD15380F3T

CSD15380F3T

$1.03
  • Description:MOSFET N-CH 20V 500MA 3PICOSTAR
  • Series:FemtoFET™
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)

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Product Detailed Parameters

  • Description:MOSFET N-CH 20V 500MA 3PICOSTAR
  • Series:FemtoFET™
  • Mfr:Texas Instruments
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 8V
  • Rds On (Max) @ Id, Vgs:1190mOhm @ 100mA, 8V
  • Vgs(th) (Max) @ Id:1.35V @ 2.5µA
  • Gate Charge (Qg) (Max) @ Vgs:0.281 nC @ 10 V
  • Vgs (Max):10V
  • Input Capacitance (Ciss) (Max) @ Vds:10.5 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):500mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-PICOSTAR
  • Package / Case:3-XFDFN

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CSD15380F3T

Overview

The CSD15380F3T is a single N-channel enhancement mode MOSFET from the FemtoFET series, manufactured by Texas Instruments. It utilizes silicon technology and is housed in a compact 3-PICOSTAR surface-mount package measuring 0.69x0.60 mm. The device features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 500 mA at ambient temperature. Key electrical characteristics include a maximum on-resistance of 1.46 Ohms at 10 V gate drive, a threshold voltage of 850 mV, and a total gate charge of 216 pC. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 500 mW.

Feature Summary

  • Ultra-compact PICOSTAR-3 packaging designed for high-density surface-mount applications
  • Low gate charge capability enabling efficient switching performance
  • Enhanced thermal stability supporting operation up to 150°C junction temperature

Applications

  • Portable consumer electronics requiring minimal footprint
  • Battery-powered devices utilizing low-voltage logic control
  • DC-DC converter output stages in space-constrained designs

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure that the requested component matches the exact part number CSD15380F3T to avoid discrepancies in pinout or electrical ratings. Cross-reference the RoHS compliance status with the latest product change notices provided by Texas Instruments prior to finalizing procurement orders.

Selection Notes

Select this component when system design constraints demand an extremely small footprint alongside adequate current handling for low-voltage applications. The 20 V rating provides sufficient headroom for standard 3.3 V and 5 V logic systems. Consider the 1.46 Ohm on-resistance for efficiency calculations in low-current scenarios where minimizing board area is prioritized over ultra-low conduction losses found in larger packages.

Part Context

This device belongs to the FemtoFET family, which focuses on miniaturization without sacrificing essential switching capabilities. The PICOSTAR package represents one of the smallest form factors available for discrete MOSFETs, allowing designers to maximize PCB real estate. It serves as a specialized solution for modern portable electronics where traditional SOT or DFN packages are too large for the required current density.

Replacement Considerations

Direct substitutes within the same FemtoFET family may include variants with different voltage or current ratings, such as the CSD15380F3 if available in alternative configurations. Verify compatibility by comparing the pinout, package dimensions, and critical electrical parameters like Rds(on) and Vgs(th) against the original specification requirements.

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