CSD16321Q5C

Overview

The CSD16321Q5C is a NexFET power MOSFET featuring an N-channel enhancement mode configuration housed in a DualCool SON 5x6mm package. It provides a drain-source voltage of 25V and supports a continuous drain current of 100A at 25°C case temperature. The device exhibits ultralow gate charge (14nC typ) and on-state resistance ranging from 1.9mΩ to 2.8mΩ depending on the gate drive voltage. Thermal performance includes junction-to-case resistances of 1.2°C/W for the top source and 1.1°C/W for the bottom drain.

Feature Summary

• DualCool package architecture optimized for two-sided cooling with dedicated thermal paths through both the top source and bottom drain pads.
• Ultralow gate charge characteristics designed to minimize switching losses and improve efficiency in high-frequency power conversion applications.
• Optimized specifically for 5V gate drive systems, ensuring low conduction losses while maintaining robust avalanche energy ratings.

Applications

• Point-of-load synchronous buck converters
• Networking equipment power stages
• Telecom system power management
• Computing system voltage regulation

Procurement Notes

Verify that the specific ordering suffix matches the required packaging format, as variations exist between tape-and-reel quantities. Confirm compliance requirements such as RoHS and halogen-free status against project specifications. Ensure the procurement channel sources production data directly from Texas Instruments or authorized distributors to guarantee component authenticity and traceability.

Selection Notes

Select this component when designing synchronous rectification circuits requiring high current density within a compact footprint. The dual-side cooling capability allows designers to reduce reliance on large copper pours by utilizing the exposed drain pad for heat dissipation. Verify that the application's gate driver can supply sufficient current to manage the fast switching speeds associated with the low gate charge profile.

Part Context

This device belongs to the NexFET family of power MOSFETs developed by Texas Instruments. The series focuses on minimizing conduction and switching losses through advanced silicon process technologies. The DualCool variant distinguishes itself by providing independent thermal interfaces, offering superior heat transfer capabilities compared to standard single-sided packages.

Replacement Considerations

Cross-reference with other NexFET devices sharing the same 5x6mm DualCool package form factor if pinout compatibility is critical. Ensure any substitute maintains equivalent or lower RDS(on) values and compatible gate threshold voltages to preserve circuit timing and efficiency parameters.