CSD16321Q5T

Overview

The CSD16321Q5T is a single N-channel NexFET power MOSFET with a 25V drain-to-source voltage rating. It features an ultra-low on-resistance of 1.9mΩ at VGS=8V and optimized gate charge characteristics, including a total Qg of 14nC at 4.5V. The device operates within a junction temperature range of -55°C to +150°C and supports a continuous drain current of 100A (package limited). It utilizes a compact 5mm × 6mm VSON-CLIP package.

Feature Summary

• Optimized for low-loss operation in 5V gate drive applications
• Features ultra-low gate charge and avalanche energy ratings
• Designed with low thermal resistance for efficient heat dissipation

Applications

• Point-of-load synchronous buck converters
• Networking system power supplies
• Telecom equipment power stages
• Computing system DC/DC conversion

Procurement Notes

Verify the specific ordering suffix against the manufacturer's orderable addendum to confirm packaging quantity and carrier type. Ensure the selected variant matches the required reel dimensions and tape specifications for automated assembly processes. Cross-reference the component marking code to validate authenticity and traceability during incoming inspection.

Selection Notes

Select this component when designing synchronous rectification circuits requiring high efficiency under 5V logic control. Evaluate the thermal performance based on the target PCB copper area, as the junction-to-ambient resistance varies significantly with board layout. Confirm that the application current remains within the package-limited continuous drain current constraints.

Part Context

This part belongs to the Texas Instruments NexFET family, which focuses on silicon-based power MOSFETs designed for high-frequency switching. The CSD16321Q5T specifically targets low-voltage, high-current applications where minimizing conduction and switching losses is critical for overall system efficiency.

Replacement Considerations

CSD16321Q5