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Product Detailed Parameters
- Description：MOSFET N-CH 25V 21A/60A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 24A, 8V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
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Overview
The CSD16323Q3 is a single N-channel NexFET power MOSFET from Texas Instruments. It features a 25-V drain-source voltage rating and an ultra-low on-resistance of 3.8 mΩ at VGS = 10 V. The device utilizes a compact 3.3 x 3.3 mm SON package with a Clip technology for enhanced thermal performance. Designed for high-efficiency applications, it supports 5-V gate drive operation to minimize switching losses.
Feature Summary
- Ultra-low on-resistance minimizes conduction losses in power conversion circuits
- Optimized for 5-V gate drive applications to enhance efficiency
- Compact SON package with Clip technology for superior thermal dissipation
Applications
- DC-DC converters
- Power management modules
- Point-of-load regulation
Procurement Notes
Verify the specific suffix Q3 indicates the correct tape and reel packaging configuration required for automated assembly processes. Confirm that the 8-PowerTDFN or equivalent SON package variant matches the PCB footprint design specifications before finalizing procurement orders to ensure mechanical compatibility.
Selection Notes
Select this component when low RDS(on) is critical for efficiency in 25-V systems. Ensure the application operates within the -55°C to 150°C junction temperature range. Verify that the gate drive voltage aligns with the optimized 5-V specification to achieve the stated performance metrics without exceeding absolute maximum ratings.
Part Context
This part belongs to Texas Instruments' NexFET family, which focuses on reducing power loss through advanced silicon technologies. The CSD16323Q3 represents a high-current density solution designed to replace older MOSFET technologies in space-constrained designs requiring high thermal reliability and fast switching speeds.
Replacement Considerations
Check for direct cross-reference part numbers from TI or other manufacturers offering identical 25-V, ~4-mΩ specifications in compatible SON packages. Ensure pinout compatibility and thermal resistance values match the existing design constraints before substituting.
