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Product Detailed Parameters
- Description：MOSFET N-CH 25V 21A/60A 8SON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 24A, 8V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SON-EP (3x3)
- Package / Case：8-PowerTDFN
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Overview
The CSD16323Q3C is an N-Channel NexFET Power MOSFET designed for power conversion applications. It features a DualCool package and supports a drain-to-source voltage of 25 V. The device is optimized for 5 V gate drive, offering ultra-low gate charge (Qg) and reverse transfer charge (Qgd). Key electrical parameters include a maximum on-state resistance (RDS(on)) of 4.4 mΩ at VGS = 4.5 V and 5.4 mΩ at VGS = 3 V. Continuous drain current is rated at 21 A, with avalanche energy capability.
Feature Summary
- DualCool package design providing low thermal resistance for efficient heat dissipation
- Optimized for 5 V gate drive applications to minimize switching losses
- Ultra-low total gate charge and gate-drain charge for high-speed operation
- Avalanche rated for robustness in inductive switching environments
Applications
- Point-of-load synchronous buck converters
- Networking system power supplies
- Telecom equipment power stages
- Computing system power distribution
Procurement Notes
Verify the marketing status before procurement as the CSD16323Q3C is classified as Not Recommended for New Designs (NRND). Confirm that existing designs can accommodate this status. Ensure compatibility with lead-free processes and RoHS compliance requirements. Validate PCB layout against recommended patterns to maintain thermal performance.
Selection Notes
Select this component for designs requiring a 25 V N-Channel MOSFET optimized for 5 V logic-level gate drives. Consider the DualCool package for superior thermal management compared to standard SON packages. Evaluate the low Qg and RDS(on) values for efficiency requirements in synchronous buck topologies. Verify that the 21 A continuous current rating meets the application's load demands.
Part Context
This part belongs to Texas Instruments' NexFET family of power MOSFETs. The series focuses on minimizing conduction and switching losses through advanced silicon technology and packaging innovations like DualCool. These devices are engineered to support high-frequency switching in compact power supply designs.
Replacement Considerations
Check for alternative NexFET devices with similar voltage ratings and package dimensions if new designs are required due to the NRND status. Ensure any substitute maintains compatible gate charge characteristics and thermal resistance specifications.
