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Product Detailed Parameters
- Description：PROTOTYPE
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta), 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 24A, 8V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 74W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
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Overview
The CSD16323Q3T is a NexFET power MOSFET featuring an N-channel silicon architecture housed in a compact 3.3-mm × 3.3-mm SON package. It provides a drain-to-source voltage rating of 25 V and achieves an ultra-low on-state resistance of 3.8 mΩ at 8 V gate drive. The device incorporates avalanche-rated capabilities for robust operation, with a total gate charge of 6.2 nC optimized for high-speed switching.
Feature Summary
- Optimized for low-loss performance in 5-V gate drive applications
- Features ultra-low gate charge to minimize switching losses
- Includes avalanche energy ratings for enhanced circuit resilience
Applications
- Point-of-load synchronous buck converters
- Networking system power regulation
- Telecom infrastructure power supplies
- Computing system power distribution
Procurement Notes
Verify the specific ordering suffix 'T' corresponds to the 7-inch reel packaging configuration containing 250 units per carrier. Confirm that the selected variant meets the required moisture sensitivity level and lead finish specifications for your assembly process before finalizing procurement orders.
Selection Notes
Evaluate the thermal resistance characteristics against your printed circuit board copper pad area requirements to ensure adequate heat dissipation. Consider the maximum continuous and pulsed drain current limits relative to your peak load demands and ambient operating temperatures during the design phase.
Part Context
This component belongs to Texas Instruments' NexFET family, which utilizes advanced silicon technology to deliver superior power density. The Q3 designation indicates the specific 3.3 mm × 3.3 mm plastic package format designed for space-constrained surface-mount applications requiring efficient thermal management.
Replacement Considerations
Consult the official product folder addendum for verified alternative part numbers within the same series. Ensure any substitute maintains compatible pinout configurations, voltage ratings, and thermal performance metrics to guarantee seamless integration without redesigning the host circuitry.
