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The CSD16327Q3T is an N-channel enhancement mode MOSFET from the NexFET family, manufactured by Texas Instruments. It features a maximum drain-source voltage of 25 V and a continuous drain current of 60 A. The device exhibits a low on-resistance of 6.5 mΩ at room temperature. It utilizes an 8-pin SON surface-mount package designed for efficient thermal dissipation.
Verify the specific ordering suffix Q3T against the manufacturer's official datasheet to confirm pinout and electrical specifications. Ensure the component matches the required voltage and current ratings for the target circuit design before procurement.
Select this component for applications requiring low voltage operation with high current handling capabilities. Consider the thermal resistance of the SON package and the gate charge requirements when designing the driver circuitry for optimal switching performance.
This part belongs to the NexFET series of power MOSFETs from Texas Instruments. The series focuses on delivering high performance in compact packages suitable for modern portable and industrial power supply designs.
Consult the manufacturer's cross-reference guide for verified substitutes. Ensure any replacement maintains compatible voltage, current, and package dimensions.