ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 25V 21A/60A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 20A, 8V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.2 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD16340Q3 is a NexFET Power MOSFET from Texas Instruments, featuring an N-channel configuration in an 8-VSON-CLIP package. It supports a drain-source voltage of 25V and delivers continuous currents of 21A at ambient temperature and 60A at case temperature. The device exhibits a maximum on-resistance of 4.5 milliohms at 8V gate drive with 20A current. Key electrical parameters include a threshold voltage of 1.1V at 250µA, gate charge of 9.2nC at 4.5V, and input capacitance of 1350pF at 12.5V. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- NexFET technology enables low gate charge for efficient switching performance
- Clip lead frame construction provides enhanced thermal dissipation capabilities
- Low on-resistance minimizes conduction losses in power applications
Applications
- DC-DC converter circuits
- Power management systems
- Motor control applications
Procurement Notes
Verify the specific suffix Q3 against official Texas Instruments documentation to confirm exact pinout and qualification status. Ensure compatibility with the 8-VSON-CLIP footprint during PCB layout. Cross-reference datasheet revisions to validate thermal resistance values and absolute maximum ratings before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring high current density in compact form factors. Evaluate thermal performance based on the specified 3W power dissipation at ambient conditions. Confirm that the 25V voltage rating aligns with system requirements and that the 8V gate drive capability matches the available control logic levels.
Part Context
This part belongs to the NexFET family of single N-channel MOSFETs manufactured by Texas Instruments. It utilizes advanced silicon process technology to achieve superior figure-of-merit characteristics compared to standard MOSFETs. The product line focuses on optimizing the balance between on-resistance and gate charge for improved efficiency.
Replacement Considerations
Consult official substitution guides for compatible NexFET devices with similar voltage and current ratings. Verify pin-to-pin compatibility and thermal characteristics when considering alternative packages or manufacturers.
