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Product Detailed Parameters
- Description：MOSFET N-CH 25V 60A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 20A, 8V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.2 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (3.3x3.3)
- Package / Case：8-PowerTDFN
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Overview
The CSD16340Q3T is a NexFET™ technology N-channel Power MOSFET manufactured by Texas Instruments. It features a low on-resistance of 4.5 milliohms at 8V gate drive and 20A drain current, with a maximum drain-source voltage of 25V. The device supports continuous drain currents of 21A at ambient temperature and 60A at case temperature. It utilizes an 8-VSON-CLIP package (3.3x3.3mm) for efficient thermal management, offering a maximum power dissipation of 3W at ambient conditions. Key electrical characteristics include a gate charge of 9.2 nC at 4.5V and an input capacitance of 1350 pF at 12.5V.
Feature Summary
- NexFET™ technology optimized for high efficiency and fast switching performance
- Low on-resistance to minimize conduction losses in power applications
- Advanced 8-VSON-CLIP package design for superior thermal dissipation
- Enhanced avalanche ruggedness for robust operation under transient conditions
Applications
- DC-DC converter output stages
- Synchronous rectification circuits
- Motor control systems
- Power distribution networks
Procurement Notes
Verify the specific suffix 'T' indicates tape and reel packaging configuration when sourcing. Confirm that the component meets RoHS compliance standards as per the manufacturer's latest documentation. Ensure compatibility with surface mount assembly processes suitable for the 8-VSON-CLIP footprint. Cross-reference the official datasheet revision history for any updates to electrical parameters or recommended soldering profiles prior to final procurement decisions.
Selection Notes
Select this component for designs requiring low voltage drop and high current handling capabilities within a compact form factor. The 25V rating suits low-voltage DC bus applications. Evaluate thermal requirements based on the 3W power dissipation limit at ambient temperature. Consider the 4.5 milliohm Rds(on) for minimizing heat generation in high-efficiency power conversion topologies where space constraints necessitate the small VSON package.
Part Context
This part belongs to Texas Instruments' NexFET™ family of power MOSFETs, designed to deliver industry-leading figure-of-merit values. The CSD16340 series specifically targets applications demanding high current density and low profile. The Q3 suffix typically denotes specific lot traceability or manufacturing site codes within the standard product line, without altering the fundamental electrical specifications defined in the primary datasheet.
Replacement Considerations
Consult the official TI replacement guide for verified cross-references. Ensure any substitute maintains identical pinout, package dimensions, and thermal characteristics. Verify that alternative components meet or exceed the 25V breakdown voltage and 4.5 milliohm on-resistance requirements for direct interchangeability in existing designs.
