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Product Detailed Parameters
- Description：MOSFET N-CH 25V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
- Rds On (Max) @ Id, Vgs：4.7mOhm @ 20A, 8V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.1 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16342Q5A is a single N-channel power MOSFET from Texas Instruments' NexFET family, designed for surface-mount applications. It features a Vds rating of 40V and an Id continuous drain current of 38A at 25°C case temperature. The device exhibits a maximum Rds(on) of 7.5mΩ at Vgs=10V. Operating within a junction temperature range of -55°C to +150°C, it utilizes an 8-VSONP (5x6mm) package.
Feature Summary
- NexFET technology optimized for low on-resistance and fast switching performance
- Enhanced thermal design with exposed pad for efficient heat dissipation
- Gate threshold voltage compatible with standard logic-level drivers
Applications
- DC-DC converter synchronous rectification
- Motor control high-side/low-side switching
- Power distribution boards in industrial equipment
Procurement Notes
Verify the specific suffix 'Q5A' against the manufacturer's latest datasheet to confirm pinout and electrical tolerances. Ensure the ordering part number matches the required tape-and-reel quantity specifications for your assembly line. Cross-reference the RoHS compliance status directly with the official documentation before finalizing procurement.
Selection Notes
Select this component when a 40V N-channel MOSFET with approximately 7.5mΩ Rds(on) is required in an 8-VSONP package. Compare total gate charge and input capacitance against system switching frequency requirements. Evaluate thermal resistance parameters relative to the PCB copper area available for heat spreading during operation.
Part Context
This device belongs to the CSD19xxxQ5A series of NexFET power MOSFETs. These components are engineered for high-efficiency power conversion systems requiring compact footprints. The series integrates advanced silicon technologies to minimize conduction losses while maintaining robust avalanche capabilities under transient conditions.
Replacement Considerations
Consult the manufacturer's cross-reference guide for verified equivalents. Ensure any substitute maintains identical pin configuration and thermal characteristics to avoid PCB redesign.
