CSD16342Q5AT

Description：PROTOTYPE
Series：NexFET™
Mfr：Texas Instruments
Package：Bulk

SKU:4b60ae5b1e02 Category: Single FETs, MOSFETs Brand: Texas Instruments

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Product introduction

Product Detailed Parameters

Description：PROTOTYPE
Series：NexFET™
Mfr：Texas Instruments
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：21A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
Rds On (Max) @ Id, Vgs：4.7mOhm @ 20A, 8V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.1 nC @ 4.5 V
Vgs (Max)：+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 12.5 V
FET Feature：-
Power Dissipation (Max)：3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-VSON (5x6)
Package / Case：8-PowerTDFN

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CSD16342Q5AT

Overview

The CSD16342Q5A is a 25V N-Channel NexFET™ Power MOSFET designed for low-loss power conversion. It features an 8-pin VSONP (DQJ) package measuring 5mm x 6mm. Key electrical parameters include a maximum drain-source voltage of 25V, continuous drain current of 21A at ambient temperature and 100A at case temperature, and a pulsed drain current of 131A. The on-resistance is rated at 7.8mΩ max at VGS=2.5V, 5.5mΩ max at VGS=4.5V, and 4.7mΩ max at VGS=8V. Total gate charge is 7.1nC max at 4.5V. Thermal resistance is 50°C/W junction-to-ambient and 1.2°C/W junction-to-case.

Feature Summary

Optimized for 5V gate drive applications with resistance ratings specified at VGS = 2.5V.
Features ultra-low gate charge (Qg) and gate-drain charge (Qgd) to minimize switching losses.
Rated for single-pulse avalanche energy of 80mJ under specific test conditions.
Constructed in a SON 5mm x 6mm plastic package with Pb-free terminal plating.

Applications

Point-of-load synchronous buck converters
Networking systems power management
Telecom systems power management
Computing systems power management

Procurement Notes

Verify the active production status and RoHS compliance before procurement. Confirm the specific ordering suffix matches the required tape and reel quantity of 2500 units. Ensure the design accommodates the VSONP DQJ package dimensions and thermal pad requirements for proper heat dissipation.

Selection Notes

Select this component for applications requiring efficient 5V logic-level gate drive control. The low RDS(on) at VGS=2.5V makes it suitable for battery-powered or low-voltage control circuits. Consider the thermal resistance values when designing PCB copper areas to ensure operation within the -55°C to 150°C junction temperature range.

Part Context

This device belongs to Texas Instruments' NexFET™ family of power MOSFETs. It is part of the CSD16342 series, specifically the Q5A variant housed in an 8-pin VSONP package. The product is classified as production data, indicating full qualification and availability for general manufacturing use.

Replacement Considerations

Check for direct pin-compatible alternatives within the CSD16342 series or other TI NexFET devices with matching 25V ratings and similar RDS(on) specifications. Verify that any substitute maintains the same VSONP 5x6mm footprint and thermal characteristics.