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The CSD16401Q5 is a 25-V N-channel NexFET power MOSFET in an 8-pin VSON-CLIP package. It features a maximum drain-source on-resistance of 2.3 mΩ and supports continuous drain currents of 38 A at ambient temperature and 100 A at case temperature. The device operates with gate-source voltages up to ±16 V, has a threshold voltage of 1.5 V, and a total gate charge of 21 nC. It withstands pulsed drain currents of 240 A and dissipates 3.1 W at ambient temperature. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official datasheet SLPS200 to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's product information page. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component for designs requiring low on-resistance within a 25-V system architecture. The VSON-CLIP package is suitable for space-constrained PCB layouts where thermal efficiency is critical. Ensure the driving circuit can handle the specified gate charge and voltage limits to maintain optimal switching performance and reliability under load conditions.
This device belongs to Texas Instruments' NexFET family, which utilizes advanced silicon processes to reduce resistance and improve efficiency. The CSD16401Q5 is engineered specifically for high-current, low-voltage applications where minimizing power loss is essential for overall system efficiency and thermal management.
Consult the manufacturer's cross-reference tools or official substitution guides for verified alternatives. Do not assume pin-compatible substitutes without verifying electrical parameters and thermal characteristics against the original specification sheet.