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Product Detailed Parameters
- Description：MOSFET N-CH 25V 31A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：31A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：2660 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16407Q5 is a single N-channel NexFET power MOSFET from Texas Instruments. It features a 25 V drain-source voltage rating and a maximum continuous drain current of 100 A at 25°C case temperature. The device exhibits a typical on-resistance of 3.3 mΩ. It operates within a junction temperature range of -55°C to +150°C and utilizes an 8-VSONP (5x6 mm) surface-mount package.
Feature Summary
- NexFET technology for low-loss power conversion
- DualCool thermal management design
- Single channel enhancement mode operation
Applications
- Low-loss power conversion systems
- DC-DC converter stages
- Power management modules
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct pinout, thermal pad configuration, and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations directly with the supplier or through the latest datasheet revision notes before procurement.
Selection Notes
Select this component for applications requiring high current handling in compact footprints. The 3.3 mΩ on-resistance supports efficient power delivery. Ensure the gate drive voltage remains within the specified limits to maintain optimal switching performance and prevent gate oxide breakdown during operation.
Part Context
This part belongs to the CSD164xxQ5 series of NexFET power MOSFETs. These devices are engineered for high-efficiency power supplies. The Q5 designation indicates the specific 8-VSONP package variant designed for improved thermal dissipation compared to standard packages.
Replacement Considerations
Check for CSD16415Q5 if lower on-resistance is required, noting its different electrical characteristics. Verify pin compatibility and thermal performance when substituting with other NexFET variants.
