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Product Detailed Parameters
- Description：MOSFET N-CH 25V 22A/113A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta), 113A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.9 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16408Q5 is an N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a 25V drain-source voltage rating and operates within a junction temperature range of -55°C to 150°C. The device utilizes an 8-VSONP (5x6) surface-mount package. Key electrical parameters include a maximum gate charge of 8.5 nC at 4.5 V, an input capacitance of 1220 pF at 12.5 V, and a continuous drain current of 21A at ambient temperature. It is designed for efficient power switching applications requiring low on-resistance.
Feature Summary
- NexFET technology optimized for high-efficiency power switching
- Low gate charge for reduced switching losses
- Robust thermal performance in compact surface-mount packaging
Applications
- DC-DC converter circuits
- Power management modules
- Battery protection systems
Procurement Notes
Verify the specific datasheet revision and ordering information directly with Texas Instruments or authorized distributors. Ensure that the component meets all RoHS compliance requirements relevant to your region. Confirm package markings and lot traceability before integration into production schedules.
Selection Notes
Select this component based on its 25V voltage rating and 8-VSONP footprint suitability for space-constrained designs. Evaluate thermal resistance characteristics against system heat dissipation capabilities. Compare gate charge specifications with driver output capabilities to ensure optimal switching performance.
Part Context
This part belongs to the NexFET family of power MOSFETs from Texas Instruments. These components are engineered to provide superior performance compared to traditional silicon technologies, offering lower on-resistance and faster switching speeds suitable for modern power electronics.
Replacement Considerations
Consult official substitution lists for compatible alternatives such as the CSD16404Q5A or CSD16413Q5A. Verify pinout compatibility and electrical parameter equivalence before replacing the original component in existing designs.
