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The CSD16408Q5C is a DualCool™ N-channel NexFET™ PowerMOSFET designed for power conversion applications. It features a 25V drain-to-source voltage and an ultra-low gate charge of 6.7 nC at 4.5V. The device offers low on-state resistance, specified as 3.6 mΩ at VGS = 10V and 5.4 mΩ at VGS = 4.5V. It supports continuous drain currents up to 113A at TC = 25°C and includes avalanche rating capabilities.
Verify the current marketing status before design implementation. The datasheet indicates this part may be classified as Not Recommended for New Designs (NRND). Confirm availability through official Texas Instruments channels or authorized distributors to ensure compliance with production lifecycle requirements.
Select this component for designs prioritizing low thermal impedance and fast switching speeds. The DualCool™ technology facilitates efficient heat dissipation through both the top source and bottom drain. Ensure the PCB layout accommodates the exposed pad for optimal thermal performance and matches the recommended copper pad dimensions.
This device belongs to the NexFET™ family from Texas Instruments, engineered to minimize conduction and switching losses. The specific Q5C suffix denotes the 5mm x 6mm plastic SON package variant. It utilizes lead-free terminal plating and complies with RoHS standards, suitable for modern environmentally compliant electronics manufacturing.
Check for updated TI product recommendations if NRND status restricts new designs. Verify pinout compatibility and thermal characteristics when substituting with other 25V NexFET devices.