ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 25V 14A/52A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.8 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD16412Q5A is a NexFET™ Power MOSFET manufactured by Texas Instruments. It features an N-channel configuration with a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 18 A at 25°C ambient temperature. The device utilizes an 8-VSONP(5x6) surface-mount package. Key electrical parameters include a maximum gate charge (Qg) of 7 nC at 4.5 V, an input capacitance (Ciss) of 950 pF at 15 V, and a threshold voltage (Vgs(th)) of 1.7 V at 250 µA. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- NexFET technology optimized for high-efficiency power switching applications
- DualCool package design facilitating enhanced thermal dissipation
- Low gate charge characteristics enabling fast switching speeds
Applications
- Synchronous buck converters
- DC-DC converter circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact packaging options such as tape and reel quantities. Ensure compatibility with standard surface-mount assembly processes. Confirm RoHS compliance status through the manufacturer's datasheet before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring a 30 V rating with moderate current handling capabilities. Evaluate the thermal performance requirements against the DualCool package's dissipation characteristics. Compare gate charge values against driver capabilities to ensure efficient switching transitions in the target circuit topology.
Part Context
This part belongs to the NexFET™ family of power MOSFETs from Texas Instruments. These devices are engineered to provide superior performance compared to traditional silicon technologies. The series focuses on reducing conduction and switching losses in compact form factors suitable for modern electronic systems.
Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics when considering equivalent components from other manufacturers.
