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Product Detailed Parameters
- Description：MOSFET N-CH 25V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.15mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29 nC @ 4.5 V
- Vgs (Max)：+16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds：4100 pF @ 12.5 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16415Q5 is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a VDS rating of 25 V and an RDS(on) of 1.5 mΩ at VGS = 10 V. The device supports a continuous drain current of 34 A (Ta) or 100 A (Tc). Key electrical parameters include a gate charge of 21 nC, threshold voltage of 1.5 V, and power dissipation of 3.2 W. Operating temperatures range from -55°C to +150°C TJ. The component utilizes an 8-VSON-CLIP package.
Feature Summary
- NexFET technology provides low on-resistance for high efficiency
- Enhanced switching performance with optimized gate charge
- Robust thermal management via clip lead frame design
Applications
- DC-DC converter output stages
- Power distribution networks
- Load switch applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm package type and tape/reel specifications. Ensure the requested part matches the exact RoHS and REACH compliance status required for your assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Selection Notes
Select this component when a 25 V breakdown voltage and ultra-low 1.5 mΩ on-resistance are required in a compact surface-mount footprint. The 8-VSON-CLIP package offers superior thermal conductivity compared to standard QFN designs. Consider the 21 nC gate charge for driving requirements in medium-frequency switching applications where conduction losses must be minimized.
Part Context
This device belongs to the CSD164xxQ5 series of NexFET Power MOSFETs from Texas Instruments. These components are designed for high-current, low-voltage applications requiring minimal conduction loss. The series utilizes advanced silicon process technology to achieve industry-leading figure-of-merit values within small outline packages suitable for dense PCB layouts.
Replacement Considerations
Direct substitutes may include CSD16414Q5, which shares similar packaging but differs in on-resistance characteristics. Verify pinout compatibility and thermal resistance values when considering alternative parts from the same manufacturer family.
