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Product Detailed Parameters
- Description：MOSFET N-CH 25V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.07mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：47 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6180 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 191W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16556Q5B is a 25-V N-Channel NexFET™ power MOSFET manufactured by Texas Instruments. It features an 8-VSON package with dimensions of 5 mm x 6 mm. The device offers a maximum on-resistance (Rds(on)) of 0.9 mΩ at Vgs = 10 V and a continuous drain current (ID) of 100 A at case temperature of 25°C. Input capacitance (Ciss) is specified as 6180 pF at Vds = 15 V. The component supports surface mount mounting and operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- NexFET technology designed to minimize conduction losses in synchronous rectification applications
- Low on-resistance for high-efficiency power conversion
- Compact 5 mm x 6 mm SON package for space-constrained designs
Applications
- Synchronous rectification in DC-DC converters
- High-current switching applications
- Power conversion systems requiring low loss
Procurement Notes
Verify the specific ordering suffix and tape/reel configuration directly with Texas Instruments or authorized distributors before procurement. Confirm that the received component matches the exact part number CSD16556Q5B, including package type and marking codes. Ensure storage conditions comply with moisture sensitivity level requirements to prevent damage prior to soldering. Check for any recent lifecycle status updates such as obsolescence or recommended new replacements.
Selection Notes
Select this component when a 25-V rating and high current capability are required in a compact footprint. The low Rds(on) makes it suitable for applications prioritizing efficiency over voltage headroom. Compare thermal performance metrics against system heat dissipation capabilities. Ensure gate drive voltage compatibility with the specified 10 V test condition for optimal on-state resistance.
Part Context
This part belongs to Texas Instruments' NexFET™ family of power MOSFETs, which utilize advanced process technologies to achieve superior figure-of-merit values. The CSD16556Q5B specifically targets high-density power supplies where size and efficiency are critical constraints. It complements other devices in the series offering similar voltage ratings but different current or package configurations.
Replacement Considerations
Consult Texas Instruments documentation for direct pin-compatible substitutes within the CSD16xxx series. Verify that any alternative device maintains equivalent Rds(on), Qg, and package dimensions to ensure board-level compatibility without redesign.
