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Product Detailed Parameters
- Description：MOSFET N-CH 25V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：0.59mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：250 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：14000 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta), 195W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD16570Q5BT is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 25V drain-source voltage rating and supports a continuous drain current of 100A at ambient temperature. The device utilizes an 8-VSONP (5x6) package with VSON-CLIP technology for enhanced thermal performance. Key electrical parameters include a maximum on-resistance of 0.59 milliohms at 10V gate drive, a threshold voltage of 1.9V, and a total gate charge of 250nC. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes NexFET technology for optimized switching efficiency and low conduction losses.
- Incorporates VSON-CLIP package design to minimize thermal resistance and improve heat dissipation capabilities.
- Features low gate charge characteristics to facilitate high-speed switching applications.
Applications
- DC-DC converter modules requiring low voltage and high current handling.
- Point-of-load (POL) regulation in server and computing infrastructure.
- Battery management systems in portable electronic devices.
Procurement Notes
Verify the specific ordering suffix and tape/reel specifications against the manufacturer's latest datasheet before procurement. Confirm that the component meets all required environmental standards, such as RoHS compliance, for your specific application constraints. Ensure compatibility with surface-mount assembly processes suitable for the 8-VSONP package dimensions.
Selection Notes
Select this component when designing circuits that require a 25V rating with high current capacity up to 100A. Consider the low on-resistance for minimizing power loss in efficient power stages. Evaluate the thermal requirements of the system to ensure the VSON-CLIP package provides adequate heat transfer for the expected operating conditions.
Part Context
This part belongs to the CSD16570 series of NexFET power MOSFETs from Texas Instruments. These components are designed for general-purpose power switching applications where size and efficiency are critical. The series leverages advanced silicon technologies to deliver robust performance in compact form factors suitable for modern electronics.
Replacement Considerations
Consult official substitution guides or cross-reference tools provided by Texas Instruments for verified alternatives. Ensure any replacement maintains identical pinout, voltage ratings, and thermal characteristics to guarantee circuit compatibility without redesign.
