ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 16A/87A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta), 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：7.9mOhm @ 14A, 8V
- Vgs(th) (Max) @ Id：1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
Download product information
Overview
The CSD17302Q5A is a single N-channel enhancement-mode MOSFET from the NexFET series, manufactured by Texas Instruments. It features a maximum drain-source voltage of 30 V and a continuous drain current rating of 87 A at case temperature or 16 A at ambient temperature. The device utilizes an 8-VSONP (5x6 mm) surface-mount package with a maximum power dissipation of 3 W at ambient conditions. Key electrical characteristics include a maximum on-resistance of 7.9 mΩ at 8 V gate drive and a typical gate charge of 7 nC at 4.5 V. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- NexFET technology optimized for low gate charge and fast switching performance
- Enhanced power cycling capability for improved reliability in demanding applications
- Low thermal resistance design facilitating efficient heat dissipation in compact footprints
Applications
- DC-DC converter modules
- Power management integrated circuits (PMICs)
- Point-of-load (POL) regulation stages
Procurement Notes
Verify the specific ordering suffix Q5A to confirm the 8-VSONP package configuration and tape-and-reel packaging format. Ensure compatibility with RoHS3 and REACH standards as indicated in official documentation. Cross-reference the manufacturer part number against authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component when designing systems requiring a 30 V N-channel switch with moderate current handling capabilities. The low gate charge supports high-frequency operation, reducing switching losses. Evaluate thermal constraints carefully, as the 3 W ambient power dissipation limit requires adequate PCB copper area for effective heat spreading during continuous operation.
Part Context
This device belongs to the CSD17302 family of NexFET power MOSFETs. It shares the same pinout and general form factor with variants like CSD17301Q5A and CSD17306Q5A, differing primarily in on-resistance and current ratings. The Q5A suffix denotes the specific 8-pin vertical SON package variant designed for surface-mount assembly.
Replacement Considerations
Direct substitutes include CSD17301Q5A and CSD17306Q5A, which share identical pinouts and package dimensions but offer different Rds(on) and current specifications. Verify that the alternative device's thermal and electrical limits meet the original design requirements.
