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Product Detailed Parameters
- Description：MOSFET N-CH 30V 29A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：29A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 30A, 8V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18.3 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：2600 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17305Q5A is a single N-channel enhancement-mode power MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage of 30 V and a low on-resistance of 3.6 mΩ at room temperature. The device supports a continuous drain current of 100 A at case temperature, with a gate threshold voltage ranging from 0.9 V to 1.6 V. Packaged in an 8-pin VSONP (5 mm x 6 mm) surface-mount footprint, it offers a thermal resistance junction-to-ambient of 50°C/W and operates within a temperature range of -55°C to +150°C.
Feature Summary
- NexFET technology for optimized switching performance
- Low on-resistance for efficient power handling
- Enhanced gate threshold voltage compatibility
- Compact VSONP package for high-density mounting
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch applications
Procurement Notes
Verify the specific datasheet revision when sourcing, as electrical characteristics may vary between updates. Confirm the package marking and pinout alignment with design schematics. Ensure storage conditions comply with moisture sensitivity levels for lead-free packages. Cross-reference ordering part numbers with authorized distributors to avoid counterfeit components.
Selection Notes
Select this component for applications requiring low conduction losses in 30 V systems. The enhanced gate threshold voltage allows compatibility with standard logic-level drivers. Evaluate thermal management requirements based on the specified junction-to-ambient resistance. Compare against alternative NexFET devices if higher voltage ratings or different package sizes are needed.
Part Context
This device belongs to the CSD1730x Q5A family of NexFET power MOSFETs. It shares the same 8-pin VSONP physical footprint with variants like the CSD17306Q5A, which typically offers slightly different on-resistance values. The family is designed for general-purpose power switching in compact form factors.
Replacement Considerations
Direct substitutes include other CSD1730xQ5A variants such as CSD17306Q5A, provided the on-resistance difference is acceptable for the thermal design. Verify that any replacement maintains the same 30 V rating and 8-pin VSONP package dimensions.
