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Product Detailed Parameters
- Description：MOSFET N-CH 30V 24A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：3.7mOhm @ 22A, 8V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.3 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：2170 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17306Q5A is a single N-channel enhancement-mode Power MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage of 30 V and a continuous drain current of 100 A at case temperature. The device utilizes an 8-pin SON (VSONP) surface-mount package with dimensions of 5 mm x 5.8 mm x 1.1 mm. Key electrical parameters include a maximum on-resistance of 4.2 mΩ, a typical gate charge of 11.8 nC at 4.5 V, and a power dissipation rating of 3.2 W. The component operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- NexFET technology designed for high-efficiency power switching applications
- Low on-resistance characteristics optimized for minimal conduction losses
- Enhanced thermal performance through compact surface-mount packaging
Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the specific datasheet revision and ordering information directly with Texas Instruments or authorized distributors. Confirm that the package marking and physical dimensions align with the 8-VSONP specification. Ensure compliance with RoHS and REACH regulations as stated in the official documentation before integration into production designs.
Selection Notes
Select this component when a 30 V N-channel MOSFET with low Rds(on) is required for space-constrained designs. The 8-pin SON package offers a balance between current handling capability and board area efficiency. Consider the thermal resistance and operating temperature limits relative to the specific application's heat dissipation requirements.
Part Context
This part belongs to the Texas Instruments NexFET family, which focuses on advanced silicon MOSFET technologies. The CSD17306Q5A is part of the CSD17306 series, sharing similar form factors but differing in electrical specifications compared to other variants like the CSD17301Q5A. It serves as a discrete power switch solution within TI's broader portfolio of power management components.
