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Product Detailed Parameters
- Description：MOSFET N-CH 30V 32A/100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：32A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 8V
- Rds On (Max) @ Id, Vgs：2mOhm @ 30A, 8V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：31 nC @ 4.5 V
- Vgs (Max)：+10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：4280 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSON-CLIP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17311Q5 is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a Vds of 30V and a continuous drain current (Id) of 100A at case temperature or 32A at ambient temperature. The device exhibits a maximum Rds(on) of 2.3 mΩ at Vgs=8V and 31 nC typical gate charge. It operates within a junction temperature range of -55°C to +150°C, with a power dissipation rating of 3.2W. The component utilizes an 8-VSON-CLIP package.
Feature Summary
- NexFET technology for enhanced switching performance
- Low on-resistance for efficient power handling
- Robust thermal management via clip lead frame
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch applications
Procurement Notes
Verify the specific ordering suffix and revision level against the manufacturer's latest datasheet before procurement. Ensure that the supply chain source provides valid traceability documentation. Confirm that the received components match the specified 8-VSON-CLIP package dimensions and pinout configuration to prevent integration errors during assembly.
Selection Notes
Select this component for designs requiring low voltage drop and high current capacity in compact form factors. Evaluate the thermal resistance characteristics relative to the PCB copper area available for heat dissipation. Consider the gate charge requirements when designing the driver circuitry to ensure adequate switching speeds without excessive drive losses.
Part Context
This part belongs to the NexFET family from Texas Instruments, designed for high-efficiency power conversion. The series emphasizes reduced conduction losses and improved thermal performance compared to standard MOSFETs. It targets modern electronics where space constraints and energy efficiency are critical design parameters.
Replacement Considerations
Check for direct substitutes such as CSD17311Q5B if higher reliability variants are required. Verify pin compatibility and electrical specifications before substituting with other 30V N-channel devices.
