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Product Detailed Parameters
- Description：MOSFET N-CH 30V 25A 6WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
- Rds On (Max) @ Id, Vgs：15.1mOhm @ 8A, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：879 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：16W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD17318Q2 is a NexFET™ Power MOSFET manufactured by Texas Instruments, designed for surface-mount applications. It features an N-channel configuration housed in a compact 6-WSON (2x2) package with an exposed pad. The device supports a drain-to-source voltage of 30 V and delivers a continuous drain current of 25 A at case temperature. Key electrical characteristics include a maximum gate charge of 6 nC at 4.5 V, an input capacitance of 879 pF at 15 V, and a threshold voltage of 1.2 V at 250 µA. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- NexFET technology optimized for low gate charge and fast switching performance
- Surface-mount design utilizing a 6-WDFN package with an exposed thermal pad
- High channel conductivity supporting significant continuous current handling
Applications
- DC-DC converter power stages
- Synchronous rectification circuits
- Low-side switching applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact packaging and tape-and-reel specifications. Ensure that the component meets RoHS compliance requirements relevant to your manufacturing process. Confirm lead times directly with authorized distributors as standard delivery periods may vary based on production volume and regional availability constraints.
Selection Notes
Select this component when a 30 V rating and high current capacity are required in a minimal footprint. The low gate charge facilitates efficient driver operation in high-frequency switching environments. Evaluate the thermal resistance provided by the exposed pad design to ensure adequate heat dissipation for the intended load conditions and ambient operating temperatures.
Part Context
This part belongs to the NexFET™ series from Texas Instruments, which focuses on advanced silicon technologies for power management. The 6-WSON package provides a small form factor suitable for dense PCB layouts. As a discrete MOSFET, it serves as a fundamental building block for power conversion systems requiring reliable switching capabilities.
Replacement Considerations
Consult the official datasheet for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains identical package dimensions and thermal characteristics to ensure seamless integration without redesigning the printed circuit board layout.
