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Product Detailed Parameters
- Description：MOSFET N-CHANNEL 30V 25A 6WSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
- Rds On (Max) @ Id, Vgs：15.1mOhm @ 8A, 8V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：879 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：16W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-WSON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD17318Q2T is a NexFET™ Power MOSFET from Texas Instruments, featuring an N-channel configuration in a compact 6-WSON (2x2) surface-mount package. It supports a drain-source voltage of 30V and a continuous drain current of 25A at case temperature. Key electrical characteristics include a maximum gate charge of 6nC at 4.5V and an input capacitance of 879pF at 15V. The device operates within a junction temperature range of -55°C to 150°C and offers a thermal dissipation capacity of 16W under case conditions.
Feature Summary
- NexFET technology optimized for low gate charge and fast switching performance
- Surface-mount design with exposed pad for efficient thermal management
- Enhanced avalanche ruggedness for robust operation in inductive loads
Applications
- DC-DC converter output stages
- Low-side switching applications
- Power management modules
Procurement Notes
Verify the specific ordering suffix 'T' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure that the component designation matches the exact part number required for your bill of materials, as suffixes can indicate variations in packaging or testing criteria defined by Texas Instruments.
Selection Notes
Select this component when a 30V N-channel MOSFET with high current handling capability is required in a minimal footprint. The low gate charge facilitates efficient drive requirements, while the WSON package suits space-constrained designs. Confirm that the thermal resistance and power dissipation ratings align with the system's heat sinking capabilities and ambient operating conditions.
Part Context
This component belongs to the NexFET™ family of power semiconductors from Texas Instruments, designed to improve efficiency in power conversion systems. The Q2 series indicates a specific generation of process technology aimed at reducing on-resistance and switching losses compared to previous iterations within the product line.
Replacement Considerations
Consult the official Texas Instruments replacement guide for verified cross-reference part numbers. Do not assume compatibility based solely on voltage and current ratings; verify pinout, thermal characteristics, and electrical parameters against the original specification.
