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Product Detailed Parameters
- Description：MOSFET N-CH 30V 87A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 8V
- Rds On (Max) @ Id, Vgs：8.8mOhm @ 14A, 8V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：695 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17322Q5A is a 30V N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes an enhanced mode technology designed for high-efficiency power switching applications. The device features a compact surface-mount package suitable for automated assembly processes.
Feature Summary
- NexFET technology optimized for low gate charge and fast switching speeds
- Enhanced mode operation for reliable turn-on characteristics
- Surface-mount construction for efficient PCB integration
Applications
- DC-DC converter circuits
- Power management systems
- General purpose switching applications
Procurement Notes
Verify the specific datasheet revision and ordering information directly with Texas Instruments or authorized distributors to ensure compliance with current manufacturing standards. Confirm package markings and tape-and-reel specifications match design requirements before finalizing procurement orders.
Selection Notes
Select this component based on its 30V drain-source voltage rating and N-channel configuration. Evaluate thermal performance and gate drive compatibility within the target circuit design. Ensure the chosen package variant meets the mechanical constraints of the printed circuit board layout.
Part Context
This part belongs to the CSD173xx series of NexFET Power MOSFETs from Texas Instruments. These devices are engineered to provide improved efficiency in power conversion stages compared to standard MOSFETs, leveraging advanced silicon process technologies for reduced conduction and switching losses.
Replacement Considerations
Compatible substitutes include other 30V N-Channel NexFET MOSFETs from the same family, such as the CSD17302Q5A, CSD17305Q5A, and CSD17306Q5A. Verify pinout compatibility and electrical parameters before substitution.
