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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3.1A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：109mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.35 nC @ 4.5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：195 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD17381F4T is a single N-channel enhancement-mode power MOSFET from Texas Instruments' FemtoFET series. It features a 30 V drain-source breakdown voltage and supports a continuous drain current of 3.1 A at ambient temperature. The device exhibits a maximum on-resistance of 109 mΩ at 8 V gate drive. Key electrical characteristics include a gate charge of 1.35 nC at 4.5 V, an input capacitance of 195 pF at 15 V, and a threshold voltage of 1.1 V. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 500 mW.
Feature Summary
- Ultra-low gate charge and input capacitance for high-speed switching efficiency
- Enhanced thermal performance via compact 3-PICOSTAR surface-mount packaging
- Low on-resistance optimized for minimal conduction losses in power paths
Applications
- DC-DC converter synchronous rectification stages
- Load switching circuits for portable electronics
- Power management modules in battery-operated devices
Procurement Notes
Verify the specific suffix 'T' indicates tape-and-reel packaging configuration distinct from cut-tape variants. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure ESD handling protocols are followed during assembly due to sensitive gate oxide structure.
Selection Notes
Select this component when low gate drive energy is critical for reducing controller burden in high-frequency applications. The 30 V rating suits 5 V and 12 V bus systems. Evaluate thermal constraints carefully as the small package limits total power dissipation compared to larger footprints.
Part Context
This part belongs to the CSD17381 family of FemtoFET MOSFETs designed for ultra-compact power solutions. It serves as a discrete alternative to integrated power blocks where individual component placement flexibility is required. The technology leverages silicon planar architecture for reliable operation in consumer and industrial environments.
Replacement Considerations
Cross-reference with CSD17381F4 for identical electrical specifications but different packaging formats. Verify pinout compatibility before substituting with other 30 V N-channel MOSFETs in the same package class.
