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Product Detailed Parameters
- Description：MOSFET N-CH 30V 1.5A 3PICOSTAR
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：240mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 4.5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：190 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD17483F4 is a single N-channel enhancement mode power MOSFET from Texas Instruments' FemtoFET series. It features a 30V drain-source voltage rating and a continuous drain current of 1.5A at ambient temperature. The device offers a maximum on-resistance of 240 milliohms at 8V gate drive. Key electrical characteristics include a gate charge of 1.01 nanocoulombs, an input capacitance of 190 picofarads, and a threshold voltage of 650 millivolts. It operates within a junction temperature range of -55°C to +150°C with a power dissipation of 500mW.
Feature Summary
- Utilizes FemtoFET technology for optimized switching performance in small packages.
- Provides low gate charge to facilitate efficient driver interface and reduced switching losses.
- Features a compact PICOSTAR-3 surface-mount package designed for high-density PCB layouts.
Applications
- DC-DC converter output stages
- Low-side switching applications
- Battery protection circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm that the component meets RoHS3 compliance requirements for your target market. Check the moisture sensitivity level and recommended reflow soldering profiles prior to assembly to prevent package damage during manufacturing processes.
Selection Notes
Select this component when a balance of low on-resistance and minimal gate charge is required for space-constrained designs. The 30V rating suits low-voltage systems where higher voltage devices would be unnecessarily large. Ensure the thermal management strategy accounts for the 500mW power dissipation limit in the specified package type.
Part Context
This part belongs to the CSD17483 family of NexFET power MOSFETs manufactured by Texas Instruments. The FemtoFET branding indicates a focus on ultra-low gate charge characteristics suitable for high-frequency operation. The PICOSTAR-3 package provides a footprint alternative to traditional SOT-23 or SC-70 options while maintaining similar physical dimensions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins before considering any cross-reference components from other manufacturers.
