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Product Detailed Parameters
- Description：MOSFET N-CH 30V 1.5A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：240mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 4.5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：190 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD17483F4T is a single N-channel enhancement mode power MOSFET from the FemtoFET series, manufactured by Texas Instruments. It utilizes silicon technology and is housed in a PICOSTAR-3 surface-mount package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 1.5 A at ambient temperature. Key electrical characteristics include a maximum on-resistance of 240 mOhms at 8 V gate drive, a threshold voltage of 650 mV, and a total gate charge of 1.01 nC. It operates within a junction temperature range of -55 °C to +150 °C with a power dissipation rating of 500 mW.
Feature Summary
- Integrated into the FemtoFET product family for optimized switching performance
- Utilizes a compact PICOSTAR-3 surface-mount footprint
- Designed as a single-channel enhancement mode device
Applications
- DC/DC converter modules
- General-purpose power switching circuits
- Battery management systems
Procurement Notes
Verify the specific suffix 'T' indicates tape-and-reel packaging when sourcing. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor datasheets. Ensure the component matches the exact part number CSD17483F4T to avoid confusion with non-tape variants. Cross-reference the manufacturer's latest revision history for any updates to electrical parameters or mechanical dimensions before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring low gate charge and fast switching speeds within a 30 V system. The PICOSTAR-3 package offers a small form factor suitable for space-constrained designs. Evaluate thermal management requirements based on the 500 mW power dissipation limit. Compare against other FemtoFET devices if higher current capacity or different voltage ratings are needed for the target application.
Part Context
This component belongs to the CSD17483 series of N-channel power MOSFETs. It shares the FemtoFET branding and PICOSTAR-3 packaging with related parts like the CSD17484F4T, which offers higher current capabilities. The series is designed for efficient power conversion in portable and industrial electronics.
Replacement Considerations
The CSD17484F4T is a documented substitute offering 3 A current capability in the same package. Verify pinout compatibility and ensure the replacement meets all voltage and thermal requirements of the original design.
