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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3A 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
- Rds On (Max) @ Id, Vgs：121mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.04 nC @ 8 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：195 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD17484F4T is a single N-channel enhancement-mode MOSFET from the FemtoFET series, manufactured by Texas Instruments. It utilizes silicon technology and is housed in a PICOSTAR-3 surface-mount package with three pins. The device features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 3 A at ambient temperature. Key electrical parameters include a maximum on-resistance (Rds(on)) of 128 mΩ, a gate threshold voltage (Vgs(th)) of 650 mV, and a total gate charge (Qg) of 920 pC. It operates within a junction temperature range of -55 °C to +150 °C with a power dissipation rating of 500 mW.
Feature Summary
- Utilizes FemtoFET technology for high-performance switching in a compact form factor.
- Features low on-resistance to minimize conduction losses in power paths.
- Designed for surface-mount installation to facilitate automated assembly.
Applications
- DC/DC converter modules
- Power management circuits
- Battery protection systems
Procurement Notes
Verify the specific ordering suffix to ensure the correct packaging configuration matches your production requirements. Confirm that the component meets all relevant RoHS compliance standards required for your target market. Cross-reference the manufacturer part number with official datasheets to validate technical specifications before finalizing procurement decisions.
Selection Notes
Select this component when a 30 V N-channel MOSFET with a 3 A current rating is required in a PICOSTAR-3 package. Consider the 128 mΩ on-resistance and 920 pC gate charge for efficiency calculations. Ensure the operating environment stays within the specified -55 °C to +150 °C temperature range and does not exceed the 500 mW power dissipation limit.
Part Context
This part belongs to the CSD17484F4 series of N-channel power MOSFETs. It is part of Texas Instruments' portfolio of small-signal and power transistors designed for efficient energy conversion. The FemtoFET branding indicates a focus on miniaturization and performance optimization for modern electronic designs requiring high density.
Replacement Considerations
The CSD17483F4 is a related variant within the same series offering different current and resistance characteristics. Verify pin compatibility and electrical limits before substituting any other N-channel MOSFETs from competing manufacturers or different TI families.
