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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A 8VSON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1650 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-VSONP (5x6)
- Package / Case：8-PowerTDFN
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Overview
The CSD17506Q5A is a single N-channel enhancement-mode power MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage of 30 V and a typical on-resistance of 4 mΩ. The device supports a maximum continuous drain current of 100 A and operates within a temperature range of -55 °C to +150 °C. Packaged in an 8-pin SON (5 mm x 6 mm) surface-mount format, it has a maximum power dissipation of 3.2 W. Key electrical parameters include a gate threshold voltage between 0.9 V and 1.6 V, a maximum gate-source voltage of ±10 V, and a typical gate charge of 11.8 nC at 4.5 V.
Feature Summary
- NexFET technology designed for high efficiency and low conduction losses
- Enhanced switching performance with low gate charge characteristics
- Robust thermal management capabilities via exposed pad SON package
Applications
- DC-DC converter modules
- Power distribution networks
- Load switch applications
Procurement Notes
Verify the specific ordering suffix Q5A to confirm the tape-and-reel packaging configuration. Ensure the component matches the 8-pin SON footprint dimensions of 5 mm by 6 mm during PCB layout validation. Confirm that the supply chain source provides original manufacturer documentation to guarantee authenticity and traceability for quality assurance purposes.
Selection Notes
Select this component when a 30 V rating and low Rds(on) are required for compact power designs. The 8-pin SON package offers superior thermal performance compared to smaller alternatives. Consider the 100 A current capability for high-load applications. Verify compatibility with standard logic-level gate drive voltages given the specified threshold voltage range.
Part Context
This part belongs to the Texas Instruments NexFET family of power MOSFETs. The series focuses on optimizing the balance between conduction and switching losses. The CSD17506Q5A utilizes silicon technology and is designed for surface-mount assembly. It represents a solution for space-constrained power electronics requiring high current density.
Replacement Considerations
The CSD17505Q5A is a documented similar variant within the same product family. Verify pinout compatibility and exact electrical parameter tolerances before substitution.
